| Record ID | marc_miami_univ_ohio/allbibs0131.out:2686745:964 |
| Source | Miami University of Ohio |
| Download Link | /show-records/marc_miami_univ_ohio/allbibs0131.out:2686745:964?format=raw |
LEADER: 00964nam 2200253Ia 4500
001 ocm43953350
005 20000515114420.0
008 000430s1999 si a b 000 0 eng d
020 $a9810233264
040 $aNAG$cNAG$dMIA
049 $aMIAS
090 $aTK7871.99.M44$bO42 1999
100 1 $aOldham, Timothy R
245 10 $aIonizing radiation effects in MOS oxides /$cTimothy R. Oldham
260 $aSingapore ;$aRiver Edge, NJ :$bWorld Scientific,$cc1999
300 $axiv, 171 p. :$bill. ;$c23 cm
440 0 $aInternational series on advances in solid state electronics and technology
504 $aIncludes bibliographical references
650 0 $aMetal oxide semiconductors$xEffect of radiation on
650 0 $aSemiconductors$xEffects of radiation
907 $a.b27705493$b05-07-02$c04-24-00
998 $ascl$b05-15-00$cm$da$e-$feng$gsi $h0$i1
947 $akis
945 $g1$i35054023509769$j0$lscli $o $p$0.00$q $r $s-$t0$u1$v0$w0$x0$y.i36029208$z05-10-00