MARC Record from marc_overdrive

LEADER: 02221nam 2200277Ka 4500
008 000000s2006 nyu s 000 0 eng d
040 $aTEFOD$cTEFOD
006 m d
007 cr cn---------
020 $a9780470030066 (electronic bk. : Adobe Digital Editions)
037 $bOverDrive, Inc.$nhttp://www.overdrive.com
100 1 $aVoldman, Steven H $q(Steven H Voldman).
245 10 $aESD$h[electronic resource].
260 $aNew York :$bJohn Wiley & Sons, Ltd.,$c2006.
500 $aTitle from eBook information screen.
520 $aThe scaling of semiconductor devices from sub-micron to nanometer dimensions is driving the need for understanding the design of electrostatic discharge (ESD) circuits, and the response of these integrated circuits (IC) to ESD phenomena. ESD Circuits and Devices provides a clear insight into the layout and design of circuitry for protection against electrical overstress (EOS) and ESD. With an emphasis on examples, this text: explains ESD buffering, ballasting, current distribution, design segmentation, feedback, coupling, and de-coupling ESD design methods; outlines the fundamental analytical models and experimental results for the ESD design of MOSFETs and diode semiconductor device elements, with a focus on CMOS, silicon on insulator (SOI), and Silicon Germanium (SiGe) technology; focuses on the ESD design, optimization, integration and synthesis of these elements and concepts into ESD networks, as well a...
533 $aElectronic reproduction.$bNew York :$cJohn Wiley & Sons, Ltd.,$d2006.$nRequires Adobe Digital Editions (file size: 4257 KB).
538 $aRequires Adobe Digital Editions (file size: 4257 KB).
653 #0 $aEngineering
653 #0 $aNonfiction
653 #0 $aTechnology
655 7 $aElectronic books.$2local
776 1 $cOriginal$z9780470847541
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856 4 $uhttp://www.librarybin.com/ContentDetails.htm?ID=4915B268-9738-4E15-8F46-2ACA70C13DF5$zClick to purchase
856 4 $3Image$uhttp://images.contentreserve.com/ImageType-100/0128-1/{4915B268-9738-4E15-8F46-2ACA70C13DF5}Img100.jpg