MARC Record from University of Toronto

LEADER: 01823cam 2200289 a 4500
001 ocm70783640
005 20061024133225.0
008 060731s2006 sz a b 001 0 eng d
020 $a2940222096 (EPFL Press)
020 $a0824725697 (CRC Press)
029 1 $aYDXCP$b2247811
039 $flk
100 1 $aLinder, Stefan,$d1965-
245 10 $aPower semiconductors /$cStefan Linder.
250 $a1st ed.
260 $aLausanne, Switzerland :$bEPFL Press ;$aBoca Raton, FL :$bDistributed by CRC Press,$cc2006.
300 $ax, 267 p. :$bill. ;$c25 cm.
440 0 $aEngineering sciences.$pElectrical engineering
504 $aIncludes bibliographical references (p. [253]-254) and index.
505 0 $aFundamentals of semiconductor physics -- The p-n Junction -- The Pin Diode -- The Bipolar Transistor -- The Thyristor -- The GTO and GTC / IGTC -- The Power MOSFET -- The IGBT -- List of symbols -- Constants -- Units -- Unit prefixes -- Writing conventions -- Circuit symbols in electrical engineering -- Material properties at 300 K.
520 $aThe aim of this book is to provide an overview of the various types of power semiconductor devices, to give an insight into how they function, and to explain and analyze the characteristics of the various components. All the important classes of power semiconductors are covered. Of particular interest, the author takes into account the role of plasma formation in the operation of highpower semiconductor devices.
650 0 $aPower semiconductors.
650 0 $aThyristors.
650 0 $aMetal oxide semiconductor field-effect transistors.
650 0 $aInsulated gate bipolar transistors.
948 $hNO HOLDINGS IN UTO - 31 OTHER HOLDINGS
949 $aTK7871.85 .L545 2006$wLC$c1$i31761070308267$d22/10/2007$e22/10/2007$lSTACKS$mENGI_CSCI$n3$rY$sY$tBOOK$u10/5/2007