An edition of SiC materials and devices
(1998)
SiC Materials and Devices, Volume 52 (Semiconductors and Semimetals)
by Robert K. Willardson, Eicke R. Weber, and Yoon S. Park
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Silicon carbide, Semiconductors, Semimetals| Edition | Availability |
|---|---|
1
SiC Materials and Devices, Volume 52 (Semiconductors and Semimetals)
May 27, 1998, Academic Press
in English
0127521607 9780127521602
|
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2
SiC Materials and Devices, Volume 52 (Semiconductors and Semimetals)
May 27, 1998, Academic Press
Hardcover
in English
0127521607 9780127521602
|
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|
Book Details
First Sentence
"Wide energy bandgaps, high thermal conductivity, high saturated electron drift velocities, and high-breakdown electric fields make silicon carbide (SiC) a candidate of choice for high-temperature, high-speed, high-frequency, and high-power applications."
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| August 4, 2020 | Edited by ImportBot | import existing book |
| July 29, 2014 | Created by ImportBot | import new book |