An edition of Semiconductor measurement technology: Permanent Damage Effects Of Nuclear Radiation On The X Band Performance Of Silicon Schottky Barrier Microwave Mixer Diodes
(1976)
Semiconductor measurement technology
Permanent Damage Effects Of Nuclear Radiation On The X Band Performance Of Silicon Schottky Barrier Microwave Mixer Diodes
by Kenney, James M. and Institute for Applied Technology (U.S.)...
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Abstract: The permanent damage Induced by nuclear radiation In silicon Schottky-barrler X-band microwave mixer diodes was assessed by subjecting separate groups of diodes to 60Co gamma rays and fast neutrons (E > 10 keV) of progressively higher levels, reaching a total gamma dose of 1.7 x lO6 rads(Sl) and & cumulative neutron fluence of 5.5 x 1015 cm-2. Measurements were made at a local oscillator frequency of 9375 MHz to determine changes In conversion Insertion loss, local oscillator return loss and SWR, 1-f output conductance, self-bias, and forward current at one dc bias voltage.
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Semiconductor measurement technology: Permanent Damage Effects Of Nuclear Radiation On The X Band Performance Of Silicon Schottky Barrier Microwave Mixer Diodes
1976, Washington : U.S. Dept. of Commerce, National Bureau of Standards, Institute for Applied Technology, Electronic Technology Division : For sale by the Supt. of Docs., U.S. Govt. Print. Off.
in English
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| November 15, 2023 | Edited by MARC Bot | import existing book |
| December 10, 2015 | Edited by ww2archive | added edition |
| December 10, 2015 | Edited by ww2archive | added book |
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