Fundamentals of modern VLSI devices
by Yuan Taur
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The great advances made in VLSI technology in recent years have been underpinned by rapid developments in the design and fabrication of CMOS and bipolar devices, particularly at the deep submicron level. This book examines in detail the basic properties and design of these devices, including chip integration, and discusses the various factors that affect their performance.
The book contains many exercises, and can be used as a textbook for senior undergraduate or first-year graduate courses on microelectronics or VLSI devices. It will also be a valuable reference volume for practicing engineers involved in research and development in the electronics industry.
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Subjects
Bipolar transistors, Complementary Metal oxide semiconductors, Integrated circuits, Metal oxide semiconductors, Complementary, Very large scale integration, Integrated circuits, very large scale integration, MOS complémentaires, Transistors bipolaires, Circuits intégrés à très grande échelle, Silicium sur isolant, CMOS, Entwurf, VLSI, Integrerade kretsar, HalvledarkretsarShowing 2 featured editions. View all 2 editions?
| Edition | Availability |
|---|---|
1
Fundamentals of modern VLSI devices
2009, Cambridge University Press
in English
- 2nd ed.
0521832942 9780521832946
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2
Fundamentals of modern VLSI devices
1998, Cambridge University Press
in English
0521550564 9780521550567
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Libraries near you:
WorldCat
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Book Details
Edition Notes
Includes bibliographical references (p. 449-460) and index.
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| July 16, 2024 | Edited by MARC Bot | import existing book |
| December 20, 2022 | Edited by MARC Bot | import existing book |
| August 20, 2020 | Edited by ImportBot | import existing book |
| December 4, 2010 | Edited by Open Library Bot | Added subjects from MARC records. |
| December 9, 2009 | Created by WorkBot | add works page |