Grid adaption for the stationary two-dimensional drift diffusion model in semiconductor device simulation

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Last edited by MARC Bot
December 7, 2020 | History

Grid adaption for the stationary two-dimensional drift diffusion model in semiconductor device simulation

1st ed.
  • 1 Want to read

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Publish Date
Publisher
Hartung-Gorre
Language
German
Pages
160

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Book Details


Edition Notes

Originally presented as the author's thesis (Swiss Federal Institute of Technology), Diss. ETH No. 14449.

Includes bibliographical references (p. 155-160).

Published in
Konstanz
Series
Series in microelectronics -- v. 126

Classifications

Library of Congress
TK7871.85 .S3856 2002

The Physical Object

Pagination
viii, 160 p.
Number of pages
160

ID Numbers

Open Library
OL31558049M
ISBN 10
3896497731
LCCN
2002492483

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History

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December 7, 2020 Created by MARC Bot import new book