An edition of Development of chemical passivation on III-V devices and of a novel high-speed dual-wavelength InA1As/InGaAs Schottky barrier photodetector (1990)

Development of chemical passivation on III-V devices and of a novel high-speed dual-wavelength InA1As/InGaAs Schottky barrier photodetector

by

Cover of: Development of chemical passivation on III-V devices and of a novel high-speed dual-wavelength InA1As/InGaAs Schottky barrier photodetector by Kiuchul Hwang, Kiuchul Hwang
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Last edited by MARC Bot
August 30, 2021 | History
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An edition of Development of chemical passivation on III-V devices and of a novel high-speed dual-wavelength InA1As/InGaAs Schottky barrier photodetector (1990)

Development of chemical passivation on III-V devices and of a novel high-speed dual-wavelength InA1As/InGaAs Schottky barrier photodetector

by

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Publish Date
Language
English
Pages
123

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Previews available in: English

Subjects

Optical detectors, Optoelectronic devices, Diodes, Schottky-barrier, Indium gallium arsenide, Indium aluminum arsenide, Passivity (Chemistry), Integrated circuits, Passivation

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Cover of: Development of chemical passivation on III-V devices and of a novel high-speed dual-wavelength InA1As/InGaAs Schottky barrier photodetector
Development of chemical passivation on III-V devices and of a novel high-speed dual-wavelength InA1As/InGaAs Schottky barrier photodetector
1990
in English
Libraries near you: WorldCat

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Book Details

Edition Notes

Typescript.

Vita.

Thesis (Ph. D.)--University of Florida, 1990.

Includes bibliographical references (leaves 116-122).

The Physical Object

Pagination
vi, 123 leaves
Number of pages
123

ID Numbers

Open Library
OL33154332M
Internet Archive
developmentofche00hwan
OCLC/WorldCat
24529485

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Internet Archive item record

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August 30, 2021 Created by MARC Bot import new book