An edition of Basic equations for the modeling of gallium nitride (GaN) high electron mobility transistors (HEMTs) (2003)

Basic equations for the modeling of gallium nitride (GaN) high electron mobility transistors (HEMTs)

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Basic equations for the modeling of gallium n ...
Jon C. Freeman, Jon C. Freeman
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Last edited by WorkBot
February 7, 2010 | History
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An edition of Basic equations for the modeling of gallium nitride (GaN) high electron mobility transistors (HEMTs) (2003)

Basic equations for the modeling of gallium nitride (GaN) high electron mobility transistors (HEMTs)

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Publish Date
Publisher
National Aeronautics and Space Administration, Glenn Research Center, Available from NASA Center for Aerospace Information, National Technical Information Service [distributor
Language
English

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Subjects

Gallium nitrides, High electron mobility transistors, Field effect transistors
Edition Availability
Cover of: Basic equations for the modeling of gallium nitride (GaN) high electron mobility transistors (HEMTs)
Basic equations for the modeling of gallium nitride (GaN) high electron mobility transistors (HEMTs)
2003, National Aeronautics and Space Administration, Glenn Research Center, Available from NASA Center for Aerospace Information, National Technical Information Service [distributor
Microform in English

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Book Details

Edition Notes

Shipping list no.: 2003-0339-M.

Also available via Internet from the Glenn Research Center web site. Address as of 1/21/04: http://gltrs.grc.nasa.gov/reports/2003/TM-2003-211983.pdf; current access available via PURL.

Microfiche. [Washington, D.C.] : Supt. of Docs., U.S. G.P.O., [2003] 1 microfiche.

Published in
[Cleveland, Ohio], Hanover, MD, Springfield, VA
Series
NASA/TM -- 2003-211983., NASA technical memorandum -- 211983.

The Physical Object

Format
Microform
Pagination
1 v.

ID Numbers

Open Library
OL16094085M

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February 7, 2010 Edited by WorkBot add more information to works
December 10, 2009 Created by WorkBot add works page