An edition of Energy and electric field dependence of Si-SiO₂ interface state parameters by optically-activated admittance measurements (1980)

Energy and electric field dependence of SiSiO₂ interface state parameters by optically-activated admittance measurements

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Energy and electric field dependence of SiSiO ...
Tommy Chut-Yu Poon, Tommy Chut ...
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Last edited by MARC Bot
December 7, 2022 | History
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An edition of Energy and electric field dependence of Si-SiO₂ interface state parameters by optically-activated admittance measurements (1980)

Energy and electric field dependence of SiSiO₂ interface state parameters by optically-activated admittance measurements

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Publish Date
Language
English
Pages
152

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Subjects

Semiconductors, Silicon, Silicon oxide
Edition Availability
Cover of: Energy and electric field dependence of Si-SiO₂ interface state parameters by optically-activated admittance measurements
Energy and electric field dependence of Si-SiO₂ interface state parameters by optically-activated admittance measurements
1980
in English
Cover of: Energy and electric field dependence of SiSiO₂ interface state parameters by optically-activated admittance measurements
Energy and electric field dependence of SiSiO₂ interface state parameters by optically-activated admittance measurements
1980
in English

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Book Details

Edition Notes

Typescript (photocopy)

Published in microform: Ann Arbor, Mich. : University Microfilms International, 1980. -- 1 microfilm reel ; 35 mm. -- ([Publication] / University Microfilms International ; 81-5090)

Thesis (Ph.D.)--Columbia University, 1980.

Includes bibliographical references.

Other Titles
Energy and electric field dependence of Si-SiO₂ interface state parameters.

The Physical Object

Pagination
iii, 152 leaves, bound
Number of pages
152

ID Numbers

Open Library
OL43178789M
OCLC/WorldCat
78287503

Source records

marc_columbia MARC record

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