An edition of Carrier density and compensation in semiconductors with multi dopants and multi transition energy levels (2011)

Carrier density and compensation in semiconductors with multi dopants and multi transition energy levels

the case of Cu impurity in CdTe : preprint

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Carrier density and compensation in semicondu ...
Su-Huai Wei
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Last edited by MARC Bot
December 13, 2022 | History
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An edition of Carrier density and compensation in semiconductors with multi dopants and multi transition energy levels (2011)

Carrier density and compensation in semiconductors with multi dopants and multi transition energy levels

the case of Cu impurity in CdTe : preprint

by

  • 0 Ratings
  • 0 Want to read
  • 0 Currently reading
  • 0 Have read

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Publish Date
Publisher
National Renewable Energy Laboratory
Language
English

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Subjects
Solar cells, Testing, Semiconductor doping, Semiconductor films

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Cover of: Carrier density and compensation in semiconductors with multi dopants and multi transition energy levels
Carrier density and compensation in semiconductors with multi dopants and multi transition energy levels: the case of Cu impurity in CdTe : preprint
2011, National Renewable Energy Laboratory
electronic resource : in English
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Book Details

Edition Notes

Title from title screen (viewed on July 29, 2011).

"Presented at the 37th IEEE Photovoltaic Specialists Conference (PVSC 37) Seattle, Washington, June 19-24, 2011."

"July 2011."

Includes bibliographical references (p. 4).

DE-AC36-08GO28308

Published in
Golden, CO]
Series
NREL/CP -- 5900-50683, Conference paper (National Renewable Energy Laboratory (U.S.)) -- 5900-50683.

The Physical Object

Format
[electronic resource] :
Pagination
1 online resource (4 p.)

ID Numbers

Open Library
OL43927113M
OCLC/WorldCat
743304713

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