An edition of Electrical properties of silicon doped by ion implantation (1968)

Electrical properties of silicon doped by ion implantation.

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Electrical properties of silicon doped by ion ...
Finn Palmgren Jensen
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Last edited by MARC Bot
October 5, 2020 | History
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An edition of Electrical properties of silicon doped by ion implantation (1968)

Electrical properties of silicon doped by ion implantation.

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Publish Date
Publisher
Physics Laboratory III, Technical University of Denmark]
Language
English
Pages
122

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Subjects
Silicon crystals, Annealing of crystals, Electric properties

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Edition Availability
Cover of: Electrical properties of silicon doped by ion implantation.
Electrical properties of silicon doped by ion implantation.
1968, Physics Laboratory III, Technical University of Denmark]
in English
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Book Details

Edition Notes

Includes bibliographical references.

Published in
[Lyngby

Classifications

Dewey Decimal Class
546/.683/2
Library of Congress
QC176.8.E35 J45

The Physical Object

Pagination
122, 4, 12, 7, 2 p.
Number of pages
122

ID Numbers

Open Library
OL5735101M
LCCN
70571071

Source records

Library of Congress MARC record

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History

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October 5, 2020 Edited by MARC Bot import existing book
December 10, 2009 Created by WorkBot add works page