An edition of Properties of advanced semiconductor materials
(2001)
Properties of advanced semiconductor materials
GaN, AlN, InN, BN, SiC, SiGe
by M. E. Levinshteĭn, Sergey L. Rumyantsev, and Michael Shur
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Subjects
Semiconductors, MaterialsShowing 2 featured editions. View all 2 editions?
| Edition | Availability |
|---|---|
1
Properties of Advanced Semiconductor Materials: GaN, AIN, InN, BN, SiC, Sige
2008, Wiley & Sons, Incorporated, John
in English
0470350245 9780470350249
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2
Properties of advanced semiconductor materials: GaN, AlN, InN, BN, SiC, SiGe
2001, Wiley
in English
0471358274 9780471358275
|
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Libraries near you:
WorldCat
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Book Details
Table of Contents
Gallium nitride (GaN) / V. Bougrov ... [et al.]
Aluminum nitride (AIN) / Yu. Goldberg
Indium nitride (InN) / A. Zubrilov
Boron nitride (BN) / S. Rumyantsev ... [et al.]
Silicon carbide (SiC) / Yu. Goldberg, M. Levinshtein, and S. Rumyantsev
Silicon-germanium (Si[subscript 1-x]Ge[subscript x]) / F. Schäffler
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Includes bibliographical references
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History
- Created September 27, 2008
- 6 revisions
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| July 18, 2024 | Edited by MARC Bot | import existing book |
| February 2, 2023 | Edited by ImportBot | import existing book |
| September 18, 2021 | Edited by ImportBot | import existing book |
| July 28, 2020 | Edited by MARC Bot | import existing book |
| September 27, 2008 | Created by ImportBot | Imported from Miami University of Ohio MARC record |