| Record ID | marc_columbia/Columbia-extract-20221130-006.mrc:464255063:1211 |
| Source | marc_columbia |
| Download Link | /show-records/marc_columbia/Columbia-extract-20221130-006.mrc:464255063:1211?format=raw |
LEADER: 01211fam a22003374a 4500
001 2997199
005 20221019184513.0
008 000523s2001 nyud b 001 0 eng
010 $a 00042262
020 $a0471358274 (cloth : alk. paper)
035 $a(OCoLC)44174231
035 $a(OCoLC)ocm44174231
035 $9ATD9214CU
035 $a(NNC)2997199
035 $a2997199
040 $aDLC$cDLC$dNNC
042 $apcc
050 00 $aQC611$b.P78 2001
082 00 $a537.6/226$221
245 00 $aProperties of advanced semiconductor materials GaN, AlN, InN, BN, SiC, SiGe /$cedited by M.E. Levinshtein, S.L. Rumyantsev, M.S. Shur.
260 $aNew York :$bJohn Wiley,$c2001.
263 $a0103
300 $a194 pages :$bcharts ;$c24 cm
336 $atext$btxt$2rdacontent
337 $aunmediated$bn$2rdamedia
504 $aIncludes bibliographical references and index.
650 0 $aSemiconductors.$0http://id.loc.gov/authorities/subjects/sh85119903
700 1 $aLevinshteĭn, M. E.$q(Mikhail Efimovich)$0http://id.loc.gov/authorities/names/n90696730
700 1 $aRumyantsev, S. L.
700 1 $aShur, Michael.$0http://id.loc.gov/authorities/names/n85385797
852 00 $boff,eng$hQC611$i.P78 2001