Design of Shallow p-type Dopants in ZnO (Presentation)

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Design of Shallow p-type Dopants in ZnO (Pres ...
Su-Huai Wei
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Last edited by MARC Bot
December 13, 2022 | History

Design of Shallow p-type Dopants in ZnO (Presentation)

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ZnO is a promising material for short wave-length opto-electronic devices such as UV lasers and LEDs due to its large exciton binding energy and low material cost. ZnO can be doped easily n-type, but the realization of stable p-type ZnO is rather difficult. Using first-principles band structure methods the authors address what causes the p-type doping difficulty in ZnO and how to overcome the p-type doping difficulty in ZnO.

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Cover of: Design of Shallow p-type Dopants in ZnO (Presentation)
Design of Shallow p-type Dopants in ZnO (Presentation)
2008, United States. Dept. of Energy, distributed by the Office of Scientific and Technical Information, U.S. Dept. of Energy
electronic resource / in English

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Edition Notes

Published through the Information Bridge: DOE Scientific and Technical Information.

"May 2008."

Presented at the 33rd IEEE Photovoltaic Specialist Conference, 11-16 May 2008 in San Diego, California.

National Renewable Energy Laboratory (NREL), Golden, CO.

DE-AC36-99GO10337

Published in
Washington, D.C, Oak Ridge, Tenn
Series
NREL/PR -- 520-43248, NREL/PR -- 520-43248.

The Physical Object

Format
[electronic resource] /
Pagination
1 online resource (32 p.)
Number of pages
32

ID Numbers

Open Library
OL43959303M
OCLC/WorldCat
727355702

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December 13, 2022 Created by MARC Bot Imported from harvard_bibliographic_metadata record