MARC Record from marc_columbia

LEADER: 08302cam a2200349Ia 4500
001 5519020
005 20221121180750.0
008 050815t20052005paua b 101 0 eng d
020 $a1558998209
035 $a(OCoLC)ocm61263882
035 $a(NNC)5519020
035 $a5519020
040 $aLHL$cLHL$dOrLoB-B
090 $aTK7871$b.C48 2005
245 00 $aChemical-mechanical planarization--integration, technology and reliability :$bsymposium held March 28-31, 2005, San Francisco, California, U.S.A. /$ceditors, Ashok Kumar [and others].
260 $aWarrendale, Pa. :$bMaterials Research Society,$c[2005], ©2005.
300 $axi, 302 pages :$billustrations ;$c24 cm.
336 $atext$btxt$2rdacontent
337 $aunmediated$bn$2rdamedia
490 1 $aMaterials Research Society symposium proceedings ;$v867
500 $a"This volume features papers from Symposium W, 'Chemical-Mechanical Planarization--Integration, Technology and Reliability, ' held March 28-31 at the 2005 MRS Spring Meeting in San Francisco, California ..."--Pref.
504 $aIncludes bibliographical references and indexes.
505 00 $tEffect of corrosion inhibitor (BTA) in citric acid based slurry on Cu CMP /$rIn-Kwon Kim, Young-Jae kang, Yi-Koan Hong and Jin-Goo Park -- $tEffect of temperature on defect generation during copper chemical mechanical planarization /$rSubrahmanya Mudhivarthi, Oarsguram Zantye, Ashok Kumar and Jeung-Yeop Shim -- $tPotential -pH diagrams of interest to chemical mechanical planarization of copper thin films /$rSerdar Aksu -- $tInvestigation on abrasive free copper chemical mechanical planarization for Cu/low-k and Cu/Ultra low-k interconnects /$rS. Balakumar, T. Haque, R. Kumar, A. S. Kumar and M. Rahman -- $tThe adhesion of pad particles on wafer surfaces during Cu CMP /$rJae-Hoon Song, Ja-Hyung Han, Yi-Koan Hong, Young-Jae Kang, Jin-Goo Park, Ju-Ho Maeng and Young-Man Won -- $tNovel use of surfactants in copper chemical mechanical polishing (CMP) /$rYoungi Hong, Udaya B. patri, Suresh Ramakrishnan and S.V. Babu -- $tRole of molecular structure of complexing/chelating agents in copper CMP slurries /$rUdaya B. Patri, S. Pandija and S. V. Babu -- $tStudy on the planarizatoin behavior of copper CMP utilizing a dense pattern and a global step /$rTilo Bormann and Johann W. Bartha -- $tCorrelation of defects on dielectric surfaces with large particle counts in chemical-mechanical planarization (CMP) slurries using a new single particle optical sensing (SPOS) technique /$rEdward E. Remsen, Sriram P. Anjur, David Boldridge, Mungai Kamiti and Shoutian Li -- $tCMP compatibility of partially cured benzocyclobutene (BCB) for a via-first 3D IC process /$rJ. J. McMahon, F. Niklaus, R. J. Kumar, J. Yu, J. -Q Lu and R. J. Gutman -- $tCharacterization of the chemical effects of ceria slurries for chemical mechanical polishing /$rJ. T. Abaide, S. Yeruva, B. Moudgil, D. Kumar and R. K. Singh -- $tIn situ metrology for end point detection during chemical mechanical polishing of shallow trench isolation structure /$rParshuram B. Zabte, S. Mudhicarthi, Ashok Kumar and David Evans -- $tCollodial silica based high selectivity shallow trench isolation (STI) chemical mechanical polishing (CMP) slurry /$rKyoung-Ho Bu and Brij M. Moudgil -- $tHigh planarization effeciency and wide process window using electro-mechanical planarization (Ecmp) /$rFeng Q. Liu, Liang Chen, Alain Duboust, Stan Tsai, Antoine Manens, Yan Wang and Wei-Yung Hsu -- $tAdvanced ELID process development for grinding silicon wafers /$rM. M. Islam, A. Senthil Kumar, S. Balakumar, H. S. Lim and M. Rahman -- $tOptimization of Psiloquest's application specific CMP pads for commercialization /$rParshuram B. Zantye, Yaw Obeng, S. Mudhivarthi and Ashok Kumar -- $tIntegration of CMP fixed abrasive polishing into the manufacuring of thick film SOI substrates /$rMartin Kulawski, Hannu Luoto, Kimmo Hentinen, Tommi Suni, Frauke Weimar and Jari Makinen -- $tThe effect of pad conditioning on planarization characteristics of chemical mechanical polising (CMO) with ceria slurry /$rYuichi Yamamoto, Takaaki Kozuki, Shunichi Shibuki, Keiichi Maeda, Yasuaki Inoue, Shinki Tawara and Naoki Toge -- $tFrictional behavior and particle adhesion of abrasive particles during Cu CMP /$rYi-Koan Hong, Ja-Hyung Han, Jae-Hoon Song and Jin-Goo Park -- $tEffect of slurry temperature on Cu chemical mechanical polishing with different oxidizing agents /$rSubrahmanya Mudhivarthi and Ashok Kumar -- $tPolishing slurries with aliminate-modified collodial silica abrasive /$rIrina Belov, Paula Watkins, Martin Perry and Keith Pierce -- $tIn situ chronoamperometry for CMP slurry investigations /$rJian Zhang, Steven Grumbine, Phillip W. Carter and Thomas Werts -- $tStrong synergistic effects between ceria and montmorillonite particles in glass CMP slurries /$rMingming Fang, Michael Ianiro, Don Eisenhour and Jason St. Onge -- $tThe adsorbtion behaviors of citric acid on abrasive particles in Cu CMP slurry /$rYoung-Jae Kang, Yi-Koan Hong, Jae-Hoon Song, In-Kwon Kim and Jin-Goo Park -- $tInvestigatimg the effects of diluting solutions and trace metal contamination on aggregation characteristics of silica-based ILD CMP slurries /$rD. DeNardis, H. Choi, A. Kim, M., Moinpour and A. Ochler -- $tInstantaneous fluid film imaging in chemical mechanical planarization /$rDaniel Apone, Caprice Gray, Chris Rogers, Vinvent P. Manno, Chris Barnes, Mandsour Moinpour, Sriram Anjur and Ara Philipossian -- $tFeasibility of detecting barrier layer to low-k transition in copper CMP using Raman spectroscopy /$rS. Kondoju, C. Juncker, P. lucas, S. Raghavan, P. Fischer, M. Moinpour, Mark Buehler and Igor Luzinov -- $tAFM measurements of adhesion between actual CMP slurry particals and various substrates /$rYong Liu, Bogdan Zdyrko, Alex Tregub, Mansour Moinpour, Mark Buehler and Igor Luzinov -- $tAbrasive contribution to CMP friction /$rDavid R. Evans and Michael R. Oliver -- $tStress characterization of post-CMP copper films planarized using novel low-shear and surface-engineered pads /$rManish Deopura, Edward Hwang, Sudhanshu Misra and Pradip K. Roy -- $tEffect of particle size distribution on filter lifetime in three slurry pump systems /$rMark R. Litchy and Reto Schoeb -- $tA universal CMP process description language for standardization /$rTakafumi Yoshida -- $tCMP at the wafer edge - modeling the interaction between edge geometry and polish performance /$rXiaolin Xie and Duane Boning -- $tYield improvement via minimization of step height non-uniformity in oxide CMP /$rTushar P.Merchant, Leonard J. Borucki, A. Scott Lawing, Suman K. Banerhee and John N. Zabassajja -- $tQuantitative in situ measurment of asperity compression under the wafer during polushing /$rCaprice Gray, Daniel Apone, Chris Rogers, Vincent P. Manno, Chris Barnes, Mansour Moinpour, Sriram Anjur and Ara Philipossian -- $tA dishing model for STI CMP process /$rShih-Hsiang Chang -- $tOn the relationship of CMP wafer nonotopography to groove-scale slurry transport /$rGregory P. Muldowney -- $tSynergy between chemical dissolution and mechanical abrasion during chemical mechanical polishing of copper /$rWei Che, Ashraf Bastawros and Abhihit Chandra -- $tModelong of polishing regimes in chemical mechanical polishing /$rSuresh B. yeruva, Chang-Won Park and Brij M. Moudgil -- $tModeling pattern effects in oxide CMP /$rR. Rzehak -- $tPattern symmetry and CMP process simulation /$rTakafumi Yoshida.
650 0 $aMicroelectronics$xMaterials$vCongresses.$0http://id.loc.gov/authorities/subjects/sh2008107190
650 0 $aGrinding and polishing$vCongresses.$0http://id.loc.gov/authorities/subjects/sh2008118429
650 0 $aMetals$xPickling$vCongresses.
650 0 $aSemiconductors$xSurfaces$vCongresses.$0http://id.loc.gov/authorities/subjects/sh2008111517
700 0 $aAśoka Kumāra.$0http://id.loc.gov/authorities/names/n89283185
710 2 $aMaterials Research Society.$bFall Meeting$d(2005 :$cSan Francisco, Calif.)
711 2 $aSymposium on Chemical-Mechanical Planarization--Integration, Technology and Reliability$d(2005 :$cSan Francisco, Calif.)
830 0 $aMaterials Research Society symposia proceedings ;$vv. 867.$0http://id.loc.gov/authorities/names/n42037756
852 00 $boff,eng$hTK7871$i.C48 2005g