An edition of Oxide Reliability (2002)

Oxide Reliability

A Summary of Silicon Oxide Wearout, Breadown, and Reliability (Selected Topics in Electronics and Systems)

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Last edited by Open Library Bot
April 28, 2010 | History
An edition of Oxide Reliability (2002)

Oxide Reliability

A Summary of Silicon Oxide Wearout, Breadown, and Reliability (Selected Topics in Electronics and Systems)

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Publish Date
Language
English
Pages
280

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Book Details


First Sentence

"The metal-oxide-semiconductor (MOS) transistor was invented in 1960 [1, 2]."

The Physical Object

Format
Hardcover
Number of pages
280
Dimensions
9.7 x 6.7 x 0.9 inches
Weight
1.4 pounds

ID Numbers

Open Library
OL9195457M
ISBN 10
9810248423
ISBN 13
9789810248420
Goodreads
1567697

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History

Download catalog record: RDF / JSON
April 28, 2010 Edited by Open Library Bot Linked existing covers to the work.
December 10, 2009 Created by WorkBot add works page